PART |
Description |
Maker |
FGL60N100BNTDNL |
1000V, 60A NPT-Trench IGBT 60 A, 1000 V, N-CHANNEL IGBT, TO-264AA
|
Fairchild Semiconductor, Corp.
|
FGA50N100BNTD |
1000V, 50A NPT-Trench IGBT CO-PAK 50 A, 1000 V, N-CHANNEL IGBT
|
Fairchild Semiconductor, Corp.
|
STTH1502FP STW34NB2004 W34NB20 STW34NB20 STW34NB20 |
N-CHANNEL 200V - 0.062 OHM - 34A TO-247 PowerMESH MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
FQD2N100 FQU2N100 FQU2N100TU FQD2N100TF FQD2N100TM |
1000V N-Channel QFET 1000V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
HGT1S11N120CNS HGTP11N120CN HGTG11N120CN HGT1S11N1 |
43A, 1200V, NPT Series N-Channel IGBT 43 A, 1200 V, N-CHANNEL IGBT, TO-263AB Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 25V; Case Size: 16x25 mm; Packaging: Bulk 43 A, 1200 V, N-CHANNEL IGBT, TO-220AB 43A/ 1200V/ NPT Series N-Channel IGBT 43A 1200V NPT Series N-Channel IGBT
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
IRFMG50 |
1000V Single N-Channel Hi-Rel MOSFET in a TO-254AA package POWER MOSFET 1000V, N-CHANNEL THRU-HOLE (TO-254AA)
|
International Rectifier
|
IXGP2N100 IXGP2N100A |
1000V high voltage IGBT
|
IXYS[IXYS Corporation]
|
IXGT40N60B2 IXGH40N60B2 |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT 75 A, 600 V, N-CHANNEL IGBT, TO-268AA HiPerFAST IGBT
|
IXYS Corporation
|
SUU40N06-25L |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 34A I(D) | TO-251 晶体管| MOSFET的| N沟道| 60V的五(巴西)直| 34A条(丁)|251
|
Vishay Intertechnology, Inc.
|
IRHY7G30CMSE |
1000V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-257AA package RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 1000V, N-CHANNEL RAD Hard⑩ HEXFET TECHNOLOGY RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 1000V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY
|
International Rectifier
|
APT1002R4BN APT1002RBN |
POWER MOS IV 1000V 7.0A 2.00 Ohm / 1000V 6.5A 2.40 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|